Multilayer Pt/Al Based Ohmic contacts for AlGaN/GaN Heterostructures Stable up to 600oC Ambient Air

摘要

In this paper, we present a Pt/Al multilayer stack-based ohmic contactmetallization for AlGaN/GaN heterostructures. CTLM structures were fabricatedto assess the electrical properties of the proposed metallization. Thefabricated stack shows excellent stability after more than 100 hours ofcontinuous aging at 600oC in air. Measured I-V characteristics of thefabricated samples show excellent linearity after the aging. The Pt/Al-basedmetallization shows great potential for future device and sensor applicationsin extreme environment conditions.